如题所述
第1个回答 2008-12-16
还是自己到网上下载74hc74的datasheet(资料)。
下面是我从下载的datasheet里面复制过来的。是不是很乱。我建议你还是自己下,(注意当你单击下载pdf后,要输入验证码,通过在“下载pdf”上右击下载可能不一样)
2003 Jul 10 2
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
GENERAL DESCRIPTION
The 74HC/HCT74 is a high-speed Si-gate CMOS device
and is pin compatible with low power Schottky TTL
(LSTTL). They are specified in compliance with JEDEC
standard no. 7A.
The 74HC/HCT74 are dual positive-edge triggered, D-type
flip-flops with individual data (D) inputs, clock (CP) inputs,
set (SD) and reset (RD) inputs; also complementary
Q and Q outputs.
The set and reset are asynchronous active LOW inputs
and operate independently of the clock input. Information
on the data input is transferred to the Q output on the
LOW-to-HIGH transition of the clock pulse. The D inputs
must be stable one set-up time prior to the LOW-to-HIGH
clock transition for predictable operation.
Schmitt-trigger action in the clock input makes the circuit
highly tolerant to slower clock rise and fall times.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf =6ns
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi
× N+ ∑(CL × VCC2 × fo) where:
fi
= input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
∑(CL × VCC2 × fo) = sum of the outputs.
2. For 74HC74 the condition is VI = GND to VCC.
For 74HCT74 the condition is VI = GND to VCC − 1.5 V.
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
HC HCT
tPHL/tPLH propagation delay CL = 15 pF; VCC =5V
nCP to nQ, nQ1415ns
nSD to nQ, nQ1518ns
nRD to nQ, nQ1618ns
fmax maximum clock frequency 76 59 MHz
CI input capacitance 3.5 3.5 pF
CPD power dissipation capacitance per flip-flop notes 1 and 2 24 29 pFDATA SHEET
Product specification
Supersedes data of 1998 Feb 23
2003 Jul 10
INTEGRATED CIRCUITS
74HC74; 74HCT74
Dual D-type flip-flop with set and
reset; positive-edge trigger2003 Jul 10 3
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
FUNCTION TABLES
Table 1 See note 1
Table 2 See note 1
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
↑ = LOW-to-HIGH CP transition;
Qn+1 = state after the next LOW-to-HIGH CP transition.
ORDERING INFORMATION
INPUT OUTPUT
SD RD CP D Q Q
LHXXHL
HLXXLH
LLXXHH
INPUT OUTPUT
SD RD CP D Qn+1 Qn+1
HH ↑ LLH
HH ↑ HHL
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE PINS PACKAGE MATERIAL CODE
74HC74N −40 to +125 °C 14 DIP14 plastic SOT27-1
74HCT74N −40 to +125 °C 14 DIP14 plastic SOT27-1
74HC74D −40 to +125 °C 14 SO14 plastic SOT108-1
74HCT74D −40 to +125 °C 14 SO14 plastic SOT108-1
74HC74DB −40 to +125 °C 14 SSOP14 plastic SOT337-1
74HCT74DB −40 to +125 °C 14 SSOP14 plastic SOT337-1
74HC74PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1
74HCT74PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1
74HC74BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1
74HCT74BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-12003 Jul 10 4
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
PINNING
PIN SYMBOL DESCRIPTION
11RD asynchronous reset-direct input (active LOW)
2 1D data input
3 1CP clock input (LOW-to-HIGH, edge-triggered)
41SD asynchronous set-direct input (active LOW)
5 1Q true flip-flop output
61Q complement flip-flop output
7 GND ground (0 V)
82Q complement flip-flop output
9 2Q true flip-flop output
10 2SD asynchronous set-direct input (active LOW)
11 2CP clock input (LOW-to-HIGH, edge-triggered)
12 2D data input
13 2RD asynchronous reset-direct input (active LOW)
14 VCC positive supply voltage
handbook, halfpage
MNA417
74
1
2
3
4
5
6
7 8
14
13
12
11
10
9
1RD
1D
1CP
1SD
1Q
1Q
GND 2Q
2Q
2SD
2CP
2D
2RD
VCC
Fig.1 Pin configuration DIP14, SO14 and
(T)SSOP14.
handbook, halfpage
114
GND(1)
1RD VCC
7
2
3
4
5
6
1D
1CP
1SD
1Q
1Q
13
12
11
10
9
2RD
2D
2CP
2SD
2Q
8
GND Top view 2Q MNB038
Fig.2 Pin configuration DHVQFN14.
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.2003 Jul 10 5
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
MNA418
handbook, halfpage
RD
FF
SD
410
Q 1Q
2Q
1Q
2Q
5
9
2
12
3
11
6
8
Q
1SD
CP
2CP
1CP
2D
1D D
2SD
113
1RD 2RD
Fig.3 Logic symbol.
handbook, halfpage
MNA419
6
3
2
C1
4
S
1D
1
R
5
8
11
12
C1
10
S
1D
13
R
9
Fig.4 IEC logic symbol.
handbook, halfpage
RD
FF
SD
4
Q 1Q
1Q
5 2
3
6 Q
1SD
CP
1CP
1D D
1 1RD
MNA420
RD
FF
SD
10
Q 2Q
2Q
9 12
11
8 Q
2SD
CP
2CP
2D D
13
2RD
Fig.5 Functional diagram.2003 Jul 10 6
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
handbook, full pagewidth
MNA421
SD
CP
RD
D
C
C
Q
C
C
C
C
C
C
Q
C
C
Fig.6 Logic diagram (one flip-flop).2003 Jul 10 7
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
SYMBOL PARAMETER CONDITIONS
74HC74 74HCT74
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
VI input voltage 0 − VCC 0 − VCC V
VO output voltage 0 − VCC 0 − VCC V
Tamb operating ambient
temperature
−40 +25 +125 −40 +25 +125 °C
tr,tf input rise and fall
times
VCC = 2.0 V −− 1000 −− 500 ns
VCC = 4.5 V − 6.0 500 − 6.0 500 ns
VCC = 6.0 V −− 400 −− 500 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +7.0 V
IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V;
note 1
−±20 mA
IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V;
note 1
−±20 mA
IO output source or sink current −0.5V<VO <VCC + 0.5 V; note 1 −±25 mA
ICC, IGND VCC or GND current −±100 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation Tamb = −40 to +125 °C; note 2 − 500 mW2003 Jul 10 8
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
DC CHARACTERISTICS
Family 74HC
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25 °C.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C; note 1
VIH HIGH-level input
voltage
2.0 1.5 1.2 − V
4.5 3.15 2.4 − V
6.0 4.2 3.2 − V
VIL LOW-level input voltage 2.0 − 0.8 0.5 V
4.5 − 2.1 1.35 V
6.0 − 2.8 1.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL
IO = −4.0 mA 4.5 3.84 4.32 − V
IO = −5.2 mA 6.0 5.34 5.81 − V
VOL LOW-level output
voltage
VI =VIH or VIL
IO = 4.0 mA 4.5 − 0.15 0.33 V
IO = 5.2 mA 6.0 − 0.16 0.33 V
ILI input leakage current VI =VCC or GND 6.0 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
6.0 −− 40 µA
Tamb = −40 to +125 °C
VIH HIGH-level input
voltage
2.0 1.5 −− V
4.5 3.15 −− V
6.0 4.2 −− V
VIL LOW-level input voltage 2.0 −− 0.5 V
4.5 −− 1.35 V
6.0 −− 1.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL
IO = −4.0 mA 4.5 3.7 −− V
IO = −5.2 mA 6.0 5.2 −− V
VOL LOW-level output
voltage
VI =VIH or VIL
IO = 4.0 mA 4.5 −− 0.4 V
IO = 5.2 mA 6.0 −− 0.4 V
ILI input leakage current VI =VCC or GND 6.0 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
6.0 −− 80 µA2003 Jul 10 9
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
Family 74HCT
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25 °C.
Remark to HCT types
The value of additional quiescent supply current (∆ICC) for a unit load of 1 is given here. To determine ∆ICC per input,
multiply this value by the unit load coefficient shown in the table.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C; note 1
VIH HIGH-level input
voltage
4.5 to 5.5 2.0 1.6 − V
VIL LOW-level input voltage 4.5 to 5.5 − 1.2 0.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL;
IO = −4.0 mA
4.5 3.84 4.32 − V
VOL LOW-level output
voltage
VI =VIH or VIL;
IO = 4.0 mA
4.5 0.33 0.15 − V
ILI input leakage current VI =VCC or GND 5.5 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
5.5 −− 40 µA
∆ICC additional quiescent
supply current per input
VI =VCC −2.1 V other
inputs at VCC or GND;
IO =0
4.5 to 5.5 − 100 450 µA
Tamb = −40 to +125 °C
VIH HIGH-level input
voltage
4.5 to 5.5 2.0 −− V
VIL LOW-level input voltage 4.5 to 5.5 −− 0.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL;
IO = −4.0 mA
4.5 3.7 −− V
VOL LOW-level output
voltage
VI =VIH or VIL;
IO = 4.0 mA
4.5 −− 0.4 V
ILI input leakage current VI =VCC or GND 5.5 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
5.5 −− 80 µA
∆ICC additional quiescent
supply current per input
VI =VCC −2.1 V other
inputs at VCC or GND;
IO =0
4.5 to 5.5 −− 490 µA
INPUT UNIT LOAD COEFFICIENT
nD 0.70
nRD 0.70
nSD 0.80
nCP 0.802003 Jul 10 10
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
AC CHARACTERISTICS
Family 74HC
GND = 0 V; tr =tf = 6 ns; CL =50pF.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation delay
nCP to nQ, nQ
see Fig.7 2.0 − 47 220 ns
4.5 − 17 44 ns
6.0 − 14 37 ns
propagation delay
nSD to nQ, nQ
see Fig.8 2.0 − 50 250 ns
4.5 − 18 50 ns
6.0 − 14 43 ns
propagation delay
nRD to nQ, nQ
see Fig.8 2.0 − 52 250 ns
4.5 − 19 50 ns
6.0 − 15 43 ns
tTHL/tTLH output transition time see Fig.7 2.0 − 19 95 ns
4.5 − 719ns
6.0 − 616ns
tW clock pulse width
HIGH or LOW
see Fig.7 2.0 100 19 − ns
4.5 20 7 − ns
6.0 17 6 − ns
set or reset pulse width
LOW
see Fig.8 2.0 100 19 − ns
4.5 20 7 − ns
6.0 17 6 − ns
trem removal time set or
reset
see Fig.8 2.0 40 3 − ns
4.5 8 1 − ns
6.0 7 1 − ns
tsu set-up time nD to nCP see Fig.7 2.0 75 6 − ns
4.5 15 2 − ns
6.0 13 2 − ns
th hold time nCP to nD see Fig.7 2.0 3 −6 − ns
4.5 3 −2 − ns
6.0 3 −2 − ns
fmax maximum clock pulse
frequency
see Fig.7 2.0 4.8 23 − MHz
4.5 24 69 − MHz
6.0 28 82 − MHz2003 Jul 10 11
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
Tamb = −40 to +125 °C
tPHL/tPLH propagation delay
nCP to nQ, nQ
see Fig.7 2.0 −− 265 ns
4.5 −− 53 ns
6.0 −− 45 ns
propagation delay
nSD to nQ, nQ
see Fig.8 2.0 −− 300 ns
4.5 −− 60 ns
6.0 −− 51 ns
propagation delay
nRD to nQ, nQ
see Fig.8 2.0 −− 300 ns
4.5 −− 60 ns
6.0 −− 51 ns
tTHL/tTLH output transition time see Fig.7 2.0 −− 110 ns
4.5 −− 22 ns
6.0 −− 19 ns
tW clock pulse width HIGH
or LOW
see Fig.7 2.0 120 −− ns
4.5 24 −− ns
6.0 20 −− ns
tW set or reset pulse width
LOW
see Fig.8 2.0 120 −− ns
4.5 24 −− ns
6.0 20 −− ns
trem removal time set or
reset
see Fig.8 2.0 45 −− ns
4.5 9 −− ns
6.0 8 −− ns
tsu set-up time nD to nCP see Fig.7 2.0 90 −− ns
4.5 18 −− ns
6.0 15 −− ns
th hold time nCP to nD see Fig.7 2.0 3 −− ns
4.5 3 −− ns
6.0 3 −− ns
fmax maximum clock pulse
frequency
see Fig.7 2.0 4.0 −− MHz
4.5 20 −− MHz
6.0 24 −− MHz
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)2003 Jul 10 12
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
Family 74HCT
GND = 0 V; tr =tf = 6 ns; CL =50pF.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation
delay nCP to nQ, nQ
see Fig.7 4.5 − 18 44 ns
propagation
delay nSD to nQ, nQ
see Fig.8 4.5 − 23 50 ns
propagation
delay nRD to nQ, nQ
see Fig.8 4.5 − 24 50 ns
tTHL/tTLH output transition time see Fig.7 4.5 − 719ns
tW clock pulse width HIGH
or LOW
see Fig.7 4.5 23 9 − ns
set or reset pulse width
LOW
see Fig.8 4.5 20 9 − ns
trem removal time set or
reset
see Fig.8 4.5 8 1 − ns
tsu set-up time nD to nCP see Fig.7 4.5 15 5 − ns
th hold time nCP to nD see Fig.7 4.5 +3 −3 − ns
fmax maximum clock pulse
frequency
see Fig.7 4.5 22 54 − MHz
Tamb = −40 to +125 °C
tPHL/tPLH propagation
delay nCP to nQ, nQ
see Fig.7 4.5 −− 53 ns
propagation
delay nSD to nQ, nQ
see Fig.8 4.5 −− 60 ns
propagation
delay nRD to nQ, nQ
see Fig.8 4.5 −− 60 ns
tTHL/tTLH output transition time see Fig.7 4.5 −− 22 ns
tW clock pulse width HIGH
or LOW
see Fig.7 4.5 27 −− ns
set or reset pulse width
LOW
see Fig.8 4.5 24 −− ns
trem removal time set or
reset
see Fig.8 4.5 9 −− ns
tsu set-up time nD to nCP see Fig.7 4.5 18 −− ns
th hold time nCP to nD see Fig.7 4.5 3 −− ns
fmax maximum clock pulse
frequency
see Fig.7 4.5 18 −− MHz2003 Jul 10 13
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
AC WAVEFORMS
handbook, full pagewidth
MNA422
t
h
t
su
t
h
t
PHL
t
PHL
t
W
t
PLH
t
PLH
t
su
1/f
max
VM
VM
VM
VM
VI
GND
VI
GND
nCP input
nD input
VOH
VOL
nQ output
VOH
VOL
nQ output
Fig.7 The clock (nCP) to output (nQ, nQ) propagation delays, the clock pulse width, the nD to nCP set-up,
the nCP to nD hold times, the output transition times and the maximum clock pulse frequency.
The shaded areas indicate when the input is permitted to change for predictable output performance.
74HC74: VM = 50%; VI = GND to VCC.
74HCT74: VM = 1.3 V; VI = GND to 3 V.2003 Jul 10 14
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
handbook, full pagewidth
MNA423
t
rem
t
PHL
t
PHL
t
W
t
PLH
t
PLH
VM
VM
VM
t
W
VM
VM
VI
GND
VI
GND
nSD input
VI
GND
nRD input
nCP input
VOH
VOL
nQ output
VOH
VOL
nQ
output
Fig.8 The set (nSD) and reset (nRD) input to output (nQ, nQ) propagation delays, the set and reset pulse widths
and the nRD, nRD to nCP removal time.
74HC74: VM = 50%; VI = GND to VCC.
74HCT74: VM = 1.3 V; VI = GND to 3 V.2003 Jul 10 15
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
handbook, full pagewidth
open
GND
VCC
VCC
我删减了一部分,提交答案的时候。提示“您提交的答案超过10000字,请删减”本回答被提问者采纳
下面是我从下载的datasheet里面复制过来的。是不是很乱。我建议你还是自己下,(注意当你单击下载pdf后,要输入验证码,通过在“下载pdf”上右击下载可能不一样)
2003 Jul 10 2
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
GENERAL DESCRIPTION
The 74HC/HCT74 is a high-speed Si-gate CMOS device
and is pin compatible with low power Schottky TTL
(LSTTL). They are specified in compliance with JEDEC
standard no. 7A.
The 74HC/HCT74 are dual positive-edge triggered, D-type
flip-flops with individual data (D) inputs, clock (CP) inputs,
set (SD) and reset (RD) inputs; also complementary
Q and Q outputs.
The set and reset are asynchronous active LOW inputs
and operate independently of the clock input. Information
on the data input is transferred to the Q output on the
LOW-to-HIGH transition of the clock pulse. The D inputs
must be stable one set-up time prior to the LOW-to-HIGH
clock transition for predictable operation.
Schmitt-trigger action in the clock input makes the circuit
highly tolerant to slower clock rise and fall times.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf =6ns
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi
× N+ ∑(CL × VCC2 × fo) where:
fi
= input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
∑(CL × VCC2 × fo) = sum of the outputs.
2. For 74HC74 the condition is VI = GND to VCC.
For 74HCT74 the condition is VI = GND to VCC − 1.5 V.
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
HC HCT
tPHL/tPLH propagation delay CL = 15 pF; VCC =5V
nCP to nQ, nQ1415ns
nSD to nQ, nQ1518ns
nRD to nQ, nQ1618ns
fmax maximum clock frequency 76 59 MHz
CI input capacitance 3.5 3.5 pF
CPD power dissipation capacitance per flip-flop notes 1 and 2 24 29 pFDATA SHEET
Product specification
Supersedes data of 1998 Feb 23
2003 Jul 10
INTEGRATED CIRCUITS
74HC74; 74HCT74
Dual D-type flip-flop with set and
reset; positive-edge trigger2003 Jul 10 3
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
FUNCTION TABLES
Table 1 See note 1
Table 2 See note 1
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
↑ = LOW-to-HIGH CP transition;
Qn+1 = state after the next LOW-to-HIGH CP transition.
ORDERING INFORMATION
INPUT OUTPUT
SD RD CP D Q Q
LHXXHL
HLXXLH
LLXXHH
INPUT OUTPUT
SD RD CP D Qn+1 Qn+1
HH ↑ LLH
HH ↑ HHL
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE PINS PACKAGE MATERIAL CODE
74HC74N −40 to +125 °C 14 DIP14 plastic SOT27-1
74HCT74N −40 to +125 °C 14 DIP14 plastic SOT27-1
74HC74D −40 to +125 °C 14 SO14 plastic SOT108-1
74HCT74D −40 to +125 °C 14 SO14 plastic SOT108-1
74HC74DB −40 to +125 °C 14 SSOP14 plastic SOT337-1
74HCT74DB −40 to +125 °C 14 SSOP14 plastic SOT337-1
74HC74PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1
74HCT74PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1
74HC74BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1
74HCT74BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-12003 Jul 10 4
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
PINNING
PIN SYMBOL DESCRIPTION
11RD asynchronous reset-direct input (active LOW)
2 1D data input
3 1CP clock input (LOW-to-HIGH, edge-triggered)
41SD asynchronous set-direct input (active LOW)
5 1Q true flip-flop output
61Q complement flip-flop output
7 GND ground (0 V)
82Q complement flip-flop output
9 2Q true flip-flop output
10 2SD asynchronous set-direct input (active LOW)
11 2CP clock input (LOW-to-HIGH, edge-triggered)
12 2D data input
13 2RD asynchronous reset-direct input (active LOW)
14 VCC positive supply voltage
handbook, halfpage
MNA417
74
1
2
3
4
5
6
7 8
14
13
12
11
10
9
1RD
1D
1CP
1SD
1Q
1Q
GND 2Q
2Q
2SD
2CP
2D
2RD
VCC
Fig.1 Pin configuration DIP14, SO14 and
(T)SSOP14.
handbook, halfpage
114
GND(1)
1RD VCC
7
2
3
4
5
6
1D
1CP
1SD
1Q
1Q
13
12
11
10
9
2RD
2D
2CP
2SD
2Q
8
GND Top view 2Q MNB038
Fig.2 Pin configuration DHVQFN14.
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.2003 Jul 10 5
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
MNA418
handbook, halfpage
RD
FF
SD
410
Q 1Q
2Q
1Q
2Q
5
9
2
12
3
11
6
8
Q
1SD
CP
2CP
1CP
2D
1D D
2SD
113
1RD 2RD
Fig.3 Logic symbol.
handbook, halfpage
MNA419
6
3
2
C1
4
S
1D
1
R
5
8
11
12
C1
10
S
1D
13
R
9
Fig.4 IEC logic symbol.
handbook, halfpage
RD
FF
SD
4
Q 1Q
1Q
5 2
3
6 Q
1SD
CP
1CP
1D D
1 1RD
MNA420
RD
FF
SD
10
Q 2Q
2Q
9 12
11
8 Q
2SD
CP
2CP
2D D
13
2RD
Fig.5 Functional diagram.2003 Jul 10 6
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
handbook, full pagewidth
MNA421
SD
CP
RD
D
C
C
Q
C
C
C
C
C
C
Q
C
C
Fig.6 Logic diagram (one flip-flop).2003 Jul 10 7
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
SYMBOL PARAMETER CONDITIONS
74HC74 74HCT74
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
VI input voltage 0 − VCC 0 − VCC V
VO output voltage 0 − VCC 0 − VCC V
Tamb operating ambient
temperature
−40 +25 +125 −40 +25 +125 °C
tr,tf input rise and fall
times
VCC = 2.0 V −− 1000 −− 500 ns
VCC = 4.5 V − 6.0 500 − 6.0 500 ns
VCC = 6.0 V −− 400 −− 500 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +7.0 V
IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V;
note 1
−±20 mA
IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V;
note 1
−±20 mA
IO output source or sink current −0.5V<VO <VCC + 0.5 V; note 1 −±25 mA
ICC, IGND VCC or GND current −±100 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation Tamb = −40 to +125 °C; note 2 − 500 mW2003 Jul 10 8
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
DC CHARACTERISTICS
Family 74HC
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25 °C.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C; note 1
VIH HIGH-level input
voltage
2.0 1.5 1.2 − V
4.5 3.15 2.4 − V
6.0 4.2 3.2 − V
VIL LOW-level input voltage 2.0 − 0.8 0.5 V
4.5 − 2.1 1.35 V
6.0 − 2.8 1.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL
IO = −4.0 mA 4.5 3.84 4.32 − V
IO = −5.2 mA 6.0 5.34 5.81 − V
VOL LOW-level output
voltage
VI =VIH or VIL
IO = 4.0 mA 4.5 − 0.15 0.33 V
IO = 5.2 mA 6.0 − 0.16 0.33 V
ILI input leakage current VI =VCC or GND 6.0 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
6.0 −− 40 µA
Tamb = −40 to +125 °C
VIH HIGH-level input
voltage
2.0 1.5 −− V
4.5 3.15 −− V
6.0 4.2 −− V
VIL LOW-level input voltage 2.0 −− 0.5 V
4.5 −− 1.35 V
6.0 −− 1.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL
IO = −4.0 mA 4.5 3.7 −− V
IO = −5.2 mA 6.0 5.2 −− V
VOL LOW-level output
voltage
VI =VIH or VIL
IO = 4.0 mA 4.5 −− 0.4 V
IO = 5.2 mA 6.0 −− 0.4 V
ILI input leakage current VI =VCC or GND 6.0 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
6.0 −− 80 µA2003 Jul 10 9
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
Family 74HCT
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25 °C.
Remark to HCT types
The value of additional quiescent supply current (∆ICC) for a unit load of 1 is given here. To determine ∆ICC per input,
multiply this value by the unit load coefficient shown in the table.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C; note 1
VIH HIGH-level input
voltage
4.5 to 5.5 2.0 1.6 − V
VIL LOW-level input voltage 4.5 to 5.5 − 1.2 0.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL;
IO = −4.0 mA
4.5 3.84 4.32 − V
VOL LOW-level output
voltage
VI =VIH or VIL;
IO = 4.0 mA
4.5 0.33 0.15 − V
ILI input leakage current VI =VCC or GND 5.5 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
5.5 −− 40 µA
∆ICC additional quiescent
supply current per input
VI =VCC −2.1 V other
inputs at VCC or GND;
IO =0
4.5 to 5.5 − 100 450 µA
Tamb = −40 to +125 °C
VIH HIGH-level input
voltage
4.5 to 5.5 2.0 −− V
VIL LOW-level input voltage 4.5 to 5.5 −− 0.8 V
VOH HIGH-level output
voltage
VI =VIH or VIL;
IO = −4.0 mA
4.5 3.7 −− V
VOL LOW-level output
voltage
VI =VIH or VIL;
IO = 4.0 mA
4.5 −− 0.4 V
ILI input leakage current VI =VCC or GND 5.5 −−±1.0 µA
ICC quiescent supply
current
VI =VCC or GND;
IO =0
5.5 −− 80 µA
∆ICC additional quiescent
supply current per input
VI =VCC −2.1 V other
inputs at VCC or GND;
IO =0
4.5 to 5.5 −− 490 µA
INPUT UNIT LOAD COEFFICIENT
nD 0.70
nRD 0.70
nSD 0.80
nCP 0.802003 Jul 10 10
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
AC CHARACTERISTICS
Family 74HC
GND = 0 V; tr =tf = 6 ns; CL =50pF.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation delay
nCP to nQ, nQ
see Fig.7 2.0 − 47 220 ns
4.5 − 17 44 ns
6.0 − 14 37 ns
propagation delay
nSD to nQ, nQ
see Fig.8 2.0 − 50 250 ns
4.5 − 18 50 ns
6.0 − 14 43 ns
propagation delay
nRD to nQ, nQ
see Fig.8 2.0 − 52 250 ns
4.5 − 19 50 ns
6.0 − 15 43 ns
tTHL/tTLH output transition time see Fig.7 2.0 − 19 95 ns
4.5 − 719ns
6.0 − 616ns
tW clock pulse width
HIGH or LOW
see Fig.7 2.0 100 19 − ns
4.5 20 7 − ns
6.0 17 6 − ns
set or reset pulse width
LOW
see Fig.8 2.0 100 19 − ns
4.5 20 7 − ns
6.0 17 6 − ns
trem removal time set or
reset
see Fig.8 2.0 40 3 − ns
4.5 8 1 − ns
6.0 7 1 − ns
tsu set-up time nD to nCP see Fig.7 2.0 75 6 − ns
4.5 15 2 − ns
6.0 13 2 − ns
th hold time nCP to nD see Fig.7 2.0 3 −6 − ns
4.5 3 −2 − ns
6.0 3 −2 − ns
fmax maximum clock pulse
frequency
see Fig.7 2.0 4.8 23 − MHz
4.5 24 69 − MHz
6.0 28 82 − MHz2003 Jul 10 11
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
Tamb = −40 to +125 °C
tPHL/tPLH propagation delay
nCP to nQ, nQ
see Fig.7 2.0 −− 265 ns
4.5 −− 53 ns
6.0 −− 45 ns
propagation delay
nSD to nQ, nQ
see Fig.8 2.0 −− 300 ns
4.5 −− 60 ns
6.0 −− 51 ns
propagation delay
nRD to nQ, nQ
see Fig.8 2.0 −− 300 ns
4.5 −− 60 ns
6.0 −− 51 ns
tTHL/tTLH output transition time see Fig.7 2.0 −− 110 ns
4.5 −− 22 ns
6.0 −− 19 ns
tW clock pulse width HIGH
or LOW
see Fig.7 2.0 120 −− ns
4.5 24 −− ns
6.0 20 −− ns
tW set or reset pulse width
LOW
see Fig.8 2.0 120 −− ns
4.5 24 −− ns
6.0 20 −− ns
trem removal time set or
reset
see Fig.8 2.0 45 −− ns
4.5 9 −− ns
6.0 8 −− ns
tsu set-up time nD to nCP see Fig.7 2.0 90 −− ns
4.5 18 −− ns
6.0 15 −− ns
th hold time nCP to nD see Fig.7 2.0 3 −− ns
4.5 3 −− ns
6.0 3 −− ns
fmax maximum clock pulse
frequency
see Fig.7 2.0 4.0 −− MHz
4.5 20 −− MHz
6.0 24 −− MHz
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)2003 Jul 10 12
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
Family 74HCT
GND = 0 V; tr =tf = 6 ns; CL =50pF.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation
delay nCP to nQ, nQ
see Fig.7 4.5 − 18 44 ns
propagation
delay nSD to nQ, nQ
see Fig.8 4.5 − 23 50 ns
propagation
delay nRD to nQ, nQ
see Fig.8 4.5 − 24 50 ns
tTHL/tTLH output transition time see Fig.7 4.5 − 719ns
tW clock pulse width HIGH
or LOW
see Fig.7 4.5 23 9 − ns
set or reset pulse width
LOW
see Fig.8 4.5 20 9 − ns
trem removal time set or
reset
see Fig.8 4.5 8 1 − ns
tsu set-up time nD to nCP see Fig.7 4.5 15 5 − ns
th hold time nCP to nD see Fig.7 4.5 +3 −3 − ns
fmax maximum clock pulse
frequency
see Fig.7 4.5 22 54 − MHz
Tamb = −40 to +125 °C
tPHL/tPLH propagation
delay nCP to nQ, nQ
see Fig.7 4.5 −− 53 ns
propagation
delay nSD to nQ, nQ
see Fig.8 4.5 −− 60 ns
propagation
delay nRD to nQ, nQ
see Fig.8 4.5 −− 60 ns
tTHL/tTLH output transition time see Fig.7 4.5 −− 22 ns
tW clock pulse width HIGH
or LOW
see Fig.7 4.5 27 −− ns
set or reset pulse width
LOW
see Fig.8 4.5 24 −− ns
trem removal time set or
reset
see Fig.8 4.5 9 −− ns
tsu set-up time nD to nCP see Fig.7 4.5 18 −− ns
th hold time nCP to nD see Fig.7 4.5 3 −− ns
fmax maximum clock pulse
frequency
see Fig.7 4.5 18 −− MHz2003 Jul 10 13
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
AC WAVEFORMS
handbook, full pagewidth
MNA422
t
h
t
su
t
h
t
PHL
t
PHL
t
W
t
PLH
t
PLH
t
su
1/f
max
VM
VM
VM
VM
VI
GND
VI
GND
nCP input
nD input
VOH
VOL
nQ output
VOH
VOL
nQ output
Fig.7 The clock (nCP) to output (nQ, nQ) propagation delays, the clock pulse width, the nD to nCP set-up,
the nCP to nD hold times, the output transition times and the maximum clock pulse frequency.
The shaded areas indicate when the input is permitted to change for predictable output performance.
74HC74: VM = 50%; VI = GND to VCC.
74HCT74: VM = 1.3 V; VI = GND to 3 V.2003 Jul 10 14
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
handbook, full pagewidth
MNA423
t
rem
t
PHL
t
PHL
t
W
t
PLH
t
PLH
VM
VM
VM
t
W
VM
VM
VI
GND
VI
GND
nSD input
VI
GND
nRD input
nCP input
VOH
VOL
nQ output
VOH
VOL
nQ
output
Fig.8 The set (nSD) and reset (nRD) input to output (nQ, nQ) propagation delays, the set and reset pulse widths
and the nRD, nRD to nCP removal time.
74HC74: VM = 50%; VI = GND to VCC.
74HCT74: VM = 1.3 V; VI = GND to 3 V.2003 Jul 10 15
Philips Semiconductors Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
handbook, full pagewidth
open
GND
VCC
VCC
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