HCF4013B这个芯片是干什么用的

HCF4013B这个芯片是干什么用的,有什么特点啊

双D触发器,以下为英文资料复制,希望对你有帮助:)
n SET - RESET CAPABILITY
n STATIC FLIP-FLOP OPERATION - RETAINS
STATE INDEFINITELY WITH CLOCK LEVEL
EITHER "HIGH" OR "LOW"
n MEDIUM SPEED OPERATION 16MHz (TYP.)
CLOCK TOGGLE RATE AT 10V
n STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
n QUIESCENT CURRENT SPECIFIED UP TO
20V
n 5V, 10V AND 15V PARAMETRIC RATINGS
n INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
n 100% TESTED FOR QUIESCENT CURRENT
n MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4013B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4013B consists of two identical,
independent data type flip-flops. Each flip-flop has
independent data, set, reset, and clock inputs and
Q and Q outputs. This device can be used for shift
register applications, and, by connecting Q output
to the data input, for counter and toggle
applications. The logic level present at the D input
is transferred to the Q output during the
positive-going transition of the clock pulse. Setting
or resetting is independent of the clock and is
accomplished by a high level on the set or reset
line, respectively
HCF4013B
DUAL D-TYPE FLIP FLOP
PIN CONNECTION
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4013BEY
SOP HCF4013BM1 HCF4013M013TR
DIP SOP
HCF4013B
2/9
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
X : Don’t Care
D : Low Level
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION
3, 11 CLOCK1
CLOCK2
Clock Inputs
4, 10
RESET1
RESET2
Reset Inputs
6, 8 SET1, SET2 Set Inputs
5, 9 D1, D2 Data Inputs
1, 13 Q1, Q2 Data Outputs
2, 12 Q1, Q2 Data Outputs
7 VSS Negative Supply Voltage
14 VDD Positive Supply Voltage
CLOCKD D RESET SET Q Q
L L L L H
H L L H L
X L L Q Q
X X H L L H
X X L H H L
X X H H H H
Symbol Parameter Value Unit
VDD Supply Voltage -0.5 to +22 V
VI DC Input Voltage -0.5 to VDD + 0.5 V
II DC Input Current ± 10 mA
PD Power Dissipation per Package 200 mW
Power Dissipation per Output Transistor 100 mW
Top Operating Temperature -55 to +125 °C
Tstg Storage Temperature -65 to +150 °C
Symbol Parameter Value Unit
VDD Supply Voltage 3 to 20 V
VI Input Voltage 0 to VDD V
Top Operating Temperature -55 to 125 °C
HCF4013B
3/9
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
Symbol Parameter
Test Condition Value
Unit VI
(V)
VO
(V)
|IO|
(mA)
VDD
(V)
TA = 25°C -40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
IL Quiescent Current 0/5 5 0.02 1 30 30
mA
0/10 10 0.02 2 60 60
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
VOH High Level Output
Voltage
0/5 <1 5 4.95 4.95 4.95
V 0/10 <1 10 9.95 9.95 9.95
0/15 <1 15 14.95 14.95 14.95
VOL Low Level Output
Voltage
5/0 <1 5 0.05 0.05 0.05
V 10/0 <1 10 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
VIH High Level Input
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
V 1/9 <1 10 7 7 7
1.5/13.5 <1 15 11 11 11
VIL Low Level Input
Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
V 9/1 <1 10 3 3 3
13.5/1.5 <1 15 4 4 4
IOH Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
mA
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
IOL Output Sink
Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
mA 0/10 0.5 <1 10 1.1 2.6 0.9 0.9
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
II Input Leakage
Current
0/18 Any Input 18 ±10-5 ±0.1 ±1 ±1 mA
CI Input Capacitance Any Input 5 7.5 pF
HCF4013B
4/9
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KW, tr = tf = 20 ns)
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
(1) Input tr, tf = 5ns
(2) If more than unit is cascaded in a parallel clocked application, tr should be made less than or equal to the sum of the fixed propagation
delay time at 15pF and the transition time of the carry output driving stage for the estimated capacitive load.
Symbol Parameter
Test Condition Value (*) Unit
VDD (V) Min. Typ. Max.
tTLH tTHL Propagation Delay Time
(CLOCK to Q or Q outputs)
5 150 300
ns 10 65 130
15 45 90
tPLH Propagation Delay Time
(SET to Q or RESET to Q)
5 150 300
ns 10 65 130
15 45 90
tPHL Propagation Delay
Time(SET to Q or RESET
to Q)
5 200 400
ns 10 85 170
15 60 120
tTHL tTLH Transition Time 5 100 200
ns 10 50 100
15 40 80
fCL
(1) Maximum Clock Input
Frequency
5 3.5 7
MHz 10 8 16
15 12 24
tW Clock Pulse Width 5 140 70
ns 10 60 30
15 40 20
tr , tf
(2) Clock Input Rise or Fall
Time
5 15
ms 10 4
15 1
tW Set or Reset Pulse Width 5 180 90
ns 10 80 40
15 50 25
tsetup Data Setup Time 5 40 20
ns 10 20 10
15 15 7
HCF4013B
5/9
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KW
RT = ZOUT of pulse generator (typically 50W)
WAVEFORM 1 : CLOCK TO Qn, Qn PROPAGATION DELAY TIMES, Dn TO CLOCK SETUP AND
HOLD TIMES, CLOCK MINIMUM PULSE WITDH, MAXIMUM CLOCK FREQUENCY
(f=1MHz; 50% duty cycle)
HCF4013B
6/9
WAVEFORM 2 : PROPAGATION DELAY TIMES (Qn, Qn TO SET, RESET), MINIMUM PULSE WIDTH
(SET AND RESET) (f=1MHz; 50% duty cycle)
HCF4013B
7/9
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
Plastic DIP-14 MECHANICAL DATA
P001A
HCF4013B
8/9
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8° (max.)
SO-14 MECHANICAL DATA
PO13G
HCF4013B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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9/9

补充:
1.锁相环里有类似的一个功能,将频率转化成电压,再通过压控振荡器控制频

2.多用电荷泵代阻容负载实现

我知道的也只有这些了,呵呵。
温馨提示:答案为网友推荐,仅供参考
第1个回答  2006-12-04
双D触发器。

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