失效位置为子模块副边续流二极管、原边主开关管、输入软启动MOS管。
针对副边二极管失效的改进措施为：把副边四个二极管都换成300V耐压的二极管，同时把原边主管换成IPB072N15N3G。该措施已经研发工程师和测试工程师测试验证。
Failure position for the son module vice edge free-wheeling diode, former edge Lord switch tube, input soft start-up MOS tube.
According to vice side diodes failure improvement measures for: the secondary side four diode wear 300V compression diodes, but at the same time, the original competent for IPB072N15N3G edge. The measures have r&d engineers and test engineers tested.
希望能帮上你~谢谢
According to vice side diodes failure improvement measures for: the secondary side four diode wear 300V compression diodes, but at the same time, the original competent for IPB072N15N3G edge. The measures have r&d engineers and test engineers tested.
希望能帮上你~谢谢
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第1个回答 2010-11-16
Location for the sub-module failure secondary freewheeling diode, the primary main switch, enter the soft-start MOS tube.
Diode failure for improving secondary measures: the four diodes are replaced by the secondary diode voltage 300V, while the primary charge into IPB072N15N3G.
The measures have been R & D engineers and test engineers to test validation.
Diode failure for improving secondary measures: the four diodes are replaced by the secondary diode voltage 300V, while the primary charge into IPB072N15N3G.
The measures have been R & D engineers and test engineers to test validation.
第2个回答 2010-11-16
Location for the sub-module failure secondary freewheeling diode, the primary main switch, enter the soft-start MOS tube.
Diode failure for improving secondary measures: the four diodes are replaced by the secondary diode voltage 300V, while the primary charge into IPB072N15N3G.The measures have been R & D engineers and test engineers to test validation.
这样行不行啊
Diode failure for improving secondary measures: the four diodes are replaced by the secondary diode voltage 300V, while the primary charge into IPB072N15N3G.The measures have been R & D engineers and test engineers to test validation.
这样行不行啊
